Semiconductor device with curved conductive lines and method of forming the same

ABSTRACT

An embodiment is package structure including a first integrated circuit die, a redistribution structure bonded to the first integrated circuit die, the redistribution structure including a first metallization pattern in a first dielectric layer, the first metallization pattern including a plurality of first conductive features, each of the first conductive features including a first conductive via in the first dielectric layer and first conductive line over the first dielectric layer and electrically coupled to the respective first conductive via, each of the first conductive lines comprising a curve in a plan view, a second dielectric layer over the first dielectric layer and the first metallization pattern, and a second metallization pattern in the second dielectric layer, the second metallization pattern including a plurality of second conductive via in the second dielectric layer, each of the second conductive vias being over and electrically coupled to a respective first conductive line.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.17/028,629, filed on Sep. 22, 2020, entitled “Chip Bonded to aRedistribution Structure with Curved Conductive Lines”, which claims thebenefit of U.S. Provisional Application No. 63/015,775, filed on Apr.27, 2020, which applications is hereby incorporated herein by reference.

BACKGROUND

The semiconductor industry has experienced rapid growth due to ongoingimprovements in the integration density of a variety of electroniccomponents (e.g., transistors, diodes, resistors, capacitors, etc.). Forthe most part, improvement in integration density has resulted fromiterative reduction of minimum feature size, which allows morecomponents to be integrated into a given area. As the demand forshrinking electronic devices has grown, a need for smaller and morecreative packaging techniques of semiconductor dies has emerged. Anexample of such packaging systems is Package-on-Package (PoP)technology. In a PoP device, a top semiconductor package is stacked ontop of a bottom semiconductor package to provide a high level ofintegration and component density. PoP technology generally enablesproduction of semiconductor devices with enhanced functionalities andsmall footprints on a printed circuit board (PCB).

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of an integrated circuit diein accordance with some embodiments.

FIGS. 2 through 7 and 10 through 18 illustrate cross-sectional views ofintermediate steps during a process for forming a package component inaccordance with some embodiments.

FIG. 8 is a plan view of conductive features in accordance with someembodiments.

FIGS. 9A and 9B are detailed plan views of conductive featuresillustrated in FIG. 8 in accordance with some embodiments.

FIG. 19 illustrates a cross-sectional view of formation andimplementation of device stacks in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Redistribution structures including metallization patterns, and methodsof forming the same are provided, according to some embodiments. Inparticular, the redistribution structures include metallization patternswith shapes that provide more flexibility for the metallization patternto deal with bending and other deformations without breaking. Forexample, the metallization patterns can have a curved, “C”-like shape ora “U”-like shape in a plan view. Metallization patterns inredistribution structures may bend or deform due to coefficient ofthermal expansion (CTE) mismatch of materials in a semiconductorpackage. This CTE mismatch can cause the metallization patterns toendure high stress due to the bending and deformation. However, thedisclosed shapes of the metallization patterns with the increasedflexibility increase the reliability of the redistribution structure.These flexibly-shaped metallization patterns are surrounded byconforming dielectric layers, such as polymer layers. The combination ofthe flexibly-shaped metallization patterns and the surroundingconforming dielectric layers provide a buffer to release the stress inthe redistribution structure and the package structure.

FIG. 1 illustrates a cross-sectional view of an integrated circuit die50 in accordance with some embodiments. The integrated circuit die 50will be packaged in subsequent processing to form an integrated circuitpackage. The integrated circuit die 50 may be a logic die (e.g., centralprocessing unit (CPU), graphics processing unit (GPU), system-on-a-chip(SoC), application processor (AP), microcontroller, etc.), a memory die(e.g., dynamic random access memory (DRAM) die, static random accessmemory (SRAM) die, etc.), a power management die (e.g., power managementintegrated circuit (PMIC) die), a radio frequency (RF) die, a sensordie, a micro-electro-mechanical-system (MEMS) die, a signal processingdie (e.g., digital signal processing (DSP) die), a front-end die (e.g.,analog front-end (AFE) dies), the like, or combinations thereof.

The integrated circuit die 50 may be formed in a wafer, which mayinclude different device regions that are singulated in subsequent stepsto form a plurality of integrated circuit dies. The integrated circuitdie 50 may be processed according to applicable manufacturing processesto form integrated circuits. For example, the integrated circuit die 50includes a semiconductor substrate 52, such as silicon, doped orundoped, or an active layer of a semiconductor-on-insulator (SOI)substrate. The semiconductor substrate 52 may include othersemiconductor materials, such as germanium; a compound semiconductorincluding silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and/or indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP,and/or GaInAsP; or combinations thereof. Other substrates, such asmulti-layered or gradient substrates, may also be used. Thesemiconductor substrate 52 has an active surface (e.g., the surfacefacing upwards in FIG. 1 ), sometimes called a front side and aninactive surface (e.g., the surface facing downwards in FIG. 1 ),sometimes called a back side.

Devices (represented by a transistor) 54 may be formed at the front sideof the semiconductor substrate 52. The devices 54 may be active devices(e.g., transistors, diodes, etc.), capacitors, resistors, etc. Aninter-layer dielectric (ILD) 56 is over the front side of thesemiconductor substrate 52. The ILD 56 surrounds and may cover thedevices 54. The ILD 56 may include one or more dielectric layers formedof materials such as Phospho-Silicate Glass (PSG), Boro-Silicate Glass(BSG), Boron-Doped Phospho-Silicate Glass (BPSG), undoped Silicate Glass(USG), or the like.

Conductive plugs 58 extend through the ILD 56 to electrically andphysically couple the devices 54. For example, when the devices 54 aretransistors, the conductive plugs 58 may couple the gates andsource/drain regions of the transistors. The conductive plugs 58 may beformed of tungsten, cobalt, nickel, copper, silver, gold, aluminum, thelike, or combinations thereof. An interconnect structure 60 is over theILD 56 and conductive plugs 58. The interconnect structure 60interconnects the devices 54 to form an integrated circuit. Theinterconnect structure 60 may be formed by, for example, metallizationpatterns in dielectric layers on the ILD 56. The metallization patternsinclude metal lines and vias formed in one or more low-k dielectriclayers. The metallization patterns of the interconnect structure 60 areelectrically coupled to the devices 54 by the conductive plugs 58.

The integrated circuit die 50 further includes pads 62, such as aluminumpads, to which external connections are made. The pads 62 are on theactive side of the integrated circuit die 50, such as in and/or on theinterconnect structure 60. One or more passivation films 64 are on theintegrated circuit die 50, such as on portions of the interconnectstructure 60 and pads 62. Openings extend through the passivation films64 to the pads 62. Die connectors 66, such as conductive pillars (forexample, formed of a metal such as copper), extend through the openingsin the passivation films 64 and are physically and electrically coupledto respective ones of the pads 62. The die connectors 66 may be formedby, for example, plating, or the like. The die connectors 66electrically couple the respective integrated circuits of the integratedcircuit die 50.

Optionally, solder regions (e.g., solder balls or solder bumps) may bedisposed on the pads 62. The solder balls may be used to perform chipprobe (CP) testing on the integrated circuit die 50. CP testing may beperformed on the integrated circuit die 50 to ascertain whether theintegrated circuit die 50 is a known good die (KGD). Thus, onlyintegrated circuit dies 50, which are KGDs, undergo subsequentprocessing and are packaged, and dies, which fail the CP testing, arenot packaged. After testing, the solder regions may be removed insubsequent processing steps.

A dielectric layer 68 may (or may not) be on the active side of theintegrated circuit die 50, such as on the passivation films 64 and thedie connectors 66. The dielectric layer 68 laterally encapsulates thedie connectors 66, and the dielectric layer 68 is laterally coterminouswith the integrated circuit die 50. Initially, the dielectric layer 68may bury the die connectors 66, such that the topmost surface of thedielectric layer 68 is above the topmost surfaces of the die connectors66. In some embodiments where solder regions are disposed on the dieconnectors 66, the dielectric layer 68 may bury the solder regions aswell. Alternatively, the solder regions may be removed prior to formingthe dielectric layer 68.

The dielectric layer 68 may be a polymer such as polybenzoxazole (PBO),polyimide, benzocyclobutene (BCB), or the like; a nitride such assilicon nitride or the like; an oxide such as silicon oxide,phosphosilicate glass (PSG), borosilicate glass (BSG), boron-dopedphosphosilicate glass (BPSG), or the like; the like, or a combinationthereof. The dielectric layer 68 may be formed, for example, by spincoating, lamination, chemical vapor deposition (CVD), or the like. Insome embodiments, the die connectors 66 are exposed through thedielectric layer 68 during formation of the integrated circuit die 50.In some embodiments, the die connectors 66 remain buried and are exposedduring a subsequent process for packaging the integrated circuit die 50.Exposing the die connectors 66 may remove any solder regions that may bepresent on the die connectors 66.

In some embodiments, the integrated circuit die 50 is a stacked devicethat includes multiple semiconductor substrates 52. For example, theintegrated circuit die 50 may be a memory device such as a hybrid memorycube (HMC) module, a high bandwidth memory (HBM) module, or the likethat includes multiple memory dies. In such embodiments, the integratedcircuit die 50 includes multiple semiconductor substrates 52interconnected by through-substrate vias (TSVs). Each of thesemiconductor substrates 52 may (or may not) have an interconnectstructure 60.

FIGS. 2 through 18 illustrate cross-sectional views of intermediatesteps during a process for forming a first package component 100, inaccordance with some embodiments. A first package region 100A and asecond package region 100B are illustrated, and one or more of theintegrated circuit dies 50 are packaged to form an integrated circuitpackage in each of the package regions 100A and 100B. The integratedcircuit packages may also be referred to as integrated fan-out (InFO)packages.

In FIG. 2 , a carrier substrate 102 is provided, and a release layer 104is formed on the carrier substrate 102. The carrier substrate 102 may bea glass carrier substrate, a ceramic carrier substrate, or the like. Thecarrier substrate 102 may be a wafer, such that multiple packages can beformed on the carrier substrate 102 simultaneously.

The release layer 104 may be formed of a polymer-based material, whichmay be removed along with the carrier substrate 102 from the overlyingstructures that will be formed in subsequent steps. In some embodiments,the release layer 104 is an epoxy-based thermal-release material, whichloses its adhesive property when heated, such as alight-to-heat-conversion (LTHC) release coating. In other embodiments,the release layer 104 may be an ultra-violet (UV) glue, which loses itsadhesive property when exposed to UV lights. The release layer 104 maybe dispensed as a liquid and cured, may be a laminate film laminatedonto the carrier substrate 102, or may be the like. The top surface ofthe release layer 104 may be leveled and may have a high degree ofplanarity.

In FIGS. 3 through 7 , a redistribution structure 120 (see FIG. 7 ) isformed over the release layer 104. The redistribution structure 120includes dielectric layers 124, 128, 132, 136, and 140; andmetallization patterns 126, 130, 134, and 138. The metallizationpatterns may also be referred to as redistribution layers orredistribution lines. The redistribution structure 120 is shown as anexample having four layers of metallization patterns. More or fewerdielectric layers and metallization patterns may be formed in theredistribution structure 120. If fewer dielectric layers andmetallization patterns are to be formed, steps and process discussedbelow may be omitted. If more dielectric layers and metallizationpatterns are to be formed, steps and processes discussed below may berepeated.

In FIG. 3 , the dielectric layer 124 is deposited on the release layer104. In some embodiments, the dielectric layer 124 is formed of aphoto-sensitive material such as PBO, polyimide, BCB, or the like, whichmay be patterned using a lithography mask. The dielectric layer 124 maybe formed by spin coating, lamination, CVD, the like, or a combinationthereof. The dielectric layer 124 is then patterned. The patterningforms openings exposing portions of the release layer 104. Thepatterning may be by an acceptable process, such as by exposing anddeveloping the dielectric layer 124 to light when the dielectric layer124 is a photo-sensitive material or by etching using, for example, ananisotropic etch.

The metallization pattern 126 is then formed. The metallization pattern126 includes conductive elements extending along the major surface ofthe dielectric layer 124 and extending through the dielectric layer 124.As an example to form the metallization pattern 126, a seed layer isformed over the dielectric layer 124 and in the openings extendingthrough the dielectric layer 124. In some embodiments, the seed layer isa metal layer, which may be a single layer or a composite layercomprising a plurality of sub-layers formed of different materials. Insome embodiments, the seed layer comprises a titanium layer and a copperlayer over the titanium layer. The seed layer may be formed using, forexample, physical vapor deposition (PVD) or the like. A photoresist isthen formed and patterned on the seed layer. The photoresist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photoresist corresponds to themetallization pattern 126. The patterning forms openings through thephotoresist to expose the seed layer. A conductive material is thenformed in the openings of the photoresist and on the exposed portions ofthe seed layer. The conductive material may be formed by plating, suchas electroplating or electroless plating, or the like. The conductivematerial may comprise a metal, like copper, titanium, tungsten,aluminum, or the like. The combination of the conductive material andunderlying portions of the seed layer form the metallization pattern126. The photoresist and portions of the seed layer on which theconductive material is not formed are removed. The photoresist may beremoved by an acceptable ashing or stripping process, such as using anoxygen plasma or the like. Once the photoresist is removed, exposedportions of the seed layer are removed, such as by using an acceptableetching process, such as by wet or dry etching.

In FIG. 4 , the dielectric layer 128 is deposited on the metallizationpattern 126 and the dielectric layer 124. The dielectric layer 128 maybe formed in a manner similar to the dielectric layer 124, and may beformed of a similar material as the dielectric layer 124.

The metallization pattern 130 is then formed. The metallization pattern130 includes portions on and extending along the major surface of thedielectric layer 128. The metallization pattern 130 further includesportions extending through the dielectric layer 128 to physically andelectrically couple the metallization pattern 126. The metallizationpattern 130 may be formed in a similar manner and of a similar materialas the metallization pattern 126. In some embodiments, the metallizationpattern 130 has a different size than the metallization pattern 126. Forexample, the conductive lines and/or vias of the metallization pattern130 may be wider or thicker than the conductive lines and/or vias of themetallization pattern 126. Further, the metallization pattern 130 may beformed to a greater pitch than the metallization pattern 126.

In FIG. 5 , the dielectric layer 132 is deposited on the metallizationpattern 130 and the dielectric layer 128. The dielectric layer 132 maybe formed in a manner similar to the dielectric layer 124, and may beformed of a similar material as the dielectric layer 124.

The metallization pattern 134 is then formed. The metallization pattern134 includes portions on and extending along the major surface of thedielectric layer 132. The metallization pattern 134 further includesportions extending through the dielectric layer 132 to physically andelectrically couple the metallization pattern 130. The metallizationpattern 134 may be formed in a similar manner and of a similar materialas the metallization pattern 126. In some embodiments, the metallizationpattern 134 has a different size than the metallization patterns 126 and130. For example, the conductive lines and/or vias of the metallizationpattern 134 may be wider or thicker than the conductive lines and/orvias of the metallization patterns 126 and 130. Further, themetallization pattern 134 may be formed to a greater pitch than themetallization pattern 130.

In FIG. 6 , the dielectric layer 136 is deposited on the metallizationpattern 134 and the dielectric layer 132. The dielectric layer 136 maybe formed in a manner similar to the dielectric layer 124, and may beformed of a similar material as the dielectric layer 124.

The metallization pattern 138 is then formed. The metallization pattern138 includes portions 138 a (including portions 138 a 1, 138 a 2, and138 a 3 as discussed below in FIGS. 9A and 9B) on and extending alongthe major surface of the dielectric layer 132. The metallization pattern138 further includes portions 138 b extending through the dielectriclayer 136 to physically and electrically couple the metallizationpattern 134. The metallization pattern 138 may be formed in a similarmanner and of a similar material as the metallization pattern 126. Themetallization pattern 138 is the topmost metallization pattern of theredistribution structure 120. In some embodiments, the metallizationpattern 138 has a different shape than the metallization patterns 126,130, and 134. For example, the portions 138 a of the metallizationpatterns 138 may be formed in a curved, C”-like or “U”-like shape in aplan view that can flex and deform without breaking (see FIGS. 8, 9A,and 9B) as discussed below. Further, the metallization patterns 134,130, and 126 may be formed to a greater pitch than the metallizationpattern 138.

In FIG. 7 , the dielectric layer 140 is deposited on the metallizationpattern 138 and the dielectric layer 136. The dielectric layer 140 maybe formed in a manner similar to the dielectric layer 124, and may beformed of a similar material as the dielectric layer 124. The dielectriclayer 140 is then patterned. The patterning forms openings exposingportions of the metallization pattern 138. The patterning may be by anacceptable process, such as by exposing and developing the dielectriclayer 140 to light when the dielectric layer 140 is a photo-sensitivematerial or by etching using, for example, an anisotropic etch.

The dielectric layer 140 has a thickness T1 and the conductive featuresof the metallization pattern 138 has a thickness T2. In someembodiments, the thickness T1 of the dielectric layer 140 is greaterthan the thickness T2 of the metallization pattern 138. In someembodiments, the thickness T1 is in the range of 5 μm to 20 μm. In someembodiments, the thickness T1 is in the range of 5 μm to 8 μm. In someembodiments, the thickness T2 is in the range of 2 μm to 15 μm. In someembodiments, the thickness T2 is in the range of 2 μm to 5 μm.

In some embodiments, the metallization pattern 138 has a different sizethan the metallization patterns 126, 130, and 134. For example, in someembodiments, the conductive lines and/or vias of the metallizationpattern 138 may be wider or thicker than the conductive lines and/orvias of the metallization patterns 126, 130, and 134. In someembodiments, the conductive lines and/or vias of the metallizationpattern 138 may be the same width and/or thickness as the conductivelines and/or vias of the metallization patterns 126, 130, and 134.

In some embodiments, the dielectric layer 140 has a different thicknessthan the dielectric layers 124, 128, 132, and 136. For example, in someembodiments, the dielectric layer 140 may be thicker than the dielectriclayers 124, 128, 132, and 136. In some embodiments, the dielectric layer140 may be the same thickness as the dielectric layers 124, 128, 132,and 136.

Conductive vias 142 are then formed in the openings in the dielectriclayer 140 to physically and electrically couple the metallizationpattern 138. As an example to form the conductive vias 142, a seed layeris formed in the openings extending through the dielectric layer 140. Insome embodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD or the like. A conductivematerial is then formed on the seed layer in the openings. Theconductive material may be formed by plating, such as electroplating orelectroless plating, or the like. The conductive material may comprise ametal, like copper, titanium, tungsten, aluminum, or the like. Thecombination of the conductive material and underlying portions of theseed layer form the conductive vias 142. A planarization process may beperformed to form a substantially planar top surface of the dielectriclayer 140 and the conductive vias 142. The planarization process mayinclude, for example, a chemical mechanical polish (CMP) process.

FIG. 8 is a plan view of the conductive features of the redistributionstructure 120, including the metallization pattern 138 (i.e., portions138 a and 138 b), and conductive vias 142. As illustrated in FIG. 8 ,the portions 138 a of the metallization pattern 138 have a curved,“C”-like or “U”-like shape in a plan view in which the portions 138 bare located at a first end of the curved shape, and the conductive vias142 are located at a second end of the curved shape. The curved,“C”-like or “U”-like shape can act like a coil of a spring and flex anddeform without breaking. Metallization patterns in redistributionstructures may bend or deform due to coefficient of thermal expansion(CTE) mismatch of materials in a semiconductor package. This CTEmismatch can cause the metallization patterns to endure high stress dueto the bending and deformation. However, the disclosed shapes of themetallization patterns with the increased flexibility increase thereliability of the redistribution structure. The flexibly-shapedmetallization pattern 138 and the flexible dielectric layer 140 may bereferred to as stress buffer films as they provide a buffer to safelyrelease the stress in the redistribution structure and the packagestructure.

FIG. 9A illustrates a detailed view of a “C”-like conductive feature ofthe metallization pattern 138 from FIG. 8 . The portion 138 a has afirst portion 138 a 1 directly over via portion 138 b, a second portion138 a 2 that extends from the first portion 138 a 1, and a third portion138 a 3 that is directly under the conductive via 142. The first andthird portions 138 a 1 and 138 a 3 are the pad portions that are coupledto the overlying and underlying vias 138 and 142, and the second portion138 a 2 has a curved or detour pattern and connects the first and thirdportions 138 a 1 and 138 a 3. The detour pattern of the second portion138 a 2 helps the conductive features of the metallization pattern 138to safely release the stress in the redistribution structure and/or thepackage structure.

In some embodiments, the pad portions 138 a 1 and 138 a 3 are wider, ina plan view, than the curved portion 138 a 2. This allows for the padportions 138 a 1 and 138 a 3 to make better connections to the overlyingand underlying vias and to improve the reliability of the redistributionstructure.

As illustrated in FIG. 9A, a line A goes through the a center of theconductive via 142 and a center of the portion 138B of the singleconductive feature of the metallization pattern 138 electrically coupledto the conductive via 142 by the portion 138 a of the same conductivefeature of metallization pattern 138. Line B extends from the center ofthe same conductive via 142 along a center of a first line segment ofthe portion 138 a 2 of the same conductive feature of the metallizationpattern extending from the conductive via 142. Line C extends from thecenter of the same portion 138 a of the same conductive feature ofmetallization pattern 138 along a center of a first line segment of theportion 138 a 2 of the same conductive feature of the metallizationpattern extending from the via portion 138 b.

In some embodiments, the lines A, B, and C are parallel to a majorsurface of the dielectric layer 140. An angle θ1 is between the line Aand the line B. In some embodiments, the angle θ1 is in the range of 30°to 150°. In some embodiments, the angle θ1 is in the range of 30° to90°. In some embodiments, the angle θ1 is in the range of 40° to 50°. Anangle θ2 is between the line A and the line C. In some embodiments, theangle θ2 is in the range of 30° to 150°. In some embodiments, the angleθ2 is in the range of 30° to 90°. In some embodiments, the angle θ2 isin the range of 40° to 50°. In some embodiments, the angles θ1 and θ2are the same. In some other embodiments, the angles θ1 and θ2 aredifferent. In some embodiments, the conductive line portions 138 a 2 ofthe metallization pattern 138 is curved and does not include any sharpcorners or sudden changes in direction. For example, the conductive lineportions 138 a 2 in a plan view slowly change directions by utilizingarcs but have no corners, such as 90° corners, with sudden changes indirections. In some embodiments, the disclosed stress relievingmetallization patterns 138 and the dielectric layer 140 can reduce thestress on underlying metallization patterns (e.g., metallization pattern134) in a range from 15% to 35%, such as 30%.

FIG. 9B illustrates a detailed view of a “U”-like conductive feature ofthe metallization pattern 138 from FIG. 8 . The major components of the“U”-like conductive feature (e.g., portions 138 a 1, 138 a 2, 138 a 3,θ1, and θ2 were previously described in FIG. 9A and the description isnot repeated herein

In some embodiments, each of the conductive features of themetallization pattern 138 on the first package component 100 have a sameshape and each are oriented in a same direction such that each of theirlines A are parallel, each of their lines B are parallel, and each oftheir lines C are parallel (see, e.g., metallization patterns in FIG. 8). In some embodiments, the conductive features of the metallizationpattern 138 have different shapes are oriented differently such thattheir lines A are not parallel, their lines B are not parallel, and/ortheir lines C are not parallel. In some embodiments, the conductivefeatures of the metallization pattern 138 are all “C”-like shape, all“U”-like shape, or are mix of “C”-like and “U”-like shapes.

Although the angles θ1 and θ2 were described using lines A, B, and C,the lines A, B, and C could be replaced by planes A, B, and C, where theplanes A, B, and C are perpendicular to the major surface of thedielectric layer 140.

In FIG. 10 , under-bump metallurgies (UBMs) 144 are formed for externalconnection to the conductive vias 142. The UBMs 144 may be referred toas pads 144. The UBMs 144 have bump portions on and extending along themajor surface of the dielectric layer 140 and physically andelectrically couple the conductive vias 142. The UBMs 144 may be formedof the same material as the conductive vias 142. In some embodiments,the UBMs 144 have a different size than the metallization patterns 126,130, 134, and 138.

As an example, the UBMs 144 may be formed by first forming a seed layerover the dielectric layer 140 and the conductive vias 142. In someembodiments, the seed layer is a metal layer, which may be a singlelayer or a composite layer comprising a plurality of sub-layers formedof different materials. In some embodiments, the seed layer comprises atitanium layer and a copper layer over the titanium layer. The seedlayer may be formed using, for example, PVD or the like. A photoresistis then formed and patterned on the seed layer. The photoresist may beformed by spin coating or the like and may be exposed to light forpatterning. The pattern of the photoresist corresponds to the UBMs 144.The patterning forms openings through the photoresist to expose the seedlayer. A conductive material is then formed in the openings of thephotoresist and on the exposed portions of the seed layer. Theconductive material may be formed by plating, such as electroplating orelectroless plating, or the like. The conductive material may comprise ametal, like copper, titanium, tungsten, aluminum, or the like. In someembodiments, the UBMs 144 may comprise alloys such as electrolessnickel, electroless palladium, immersion gold (ENEPIG), electrolessnickel, immersion gold (ENIG), or the like. The combination of theconductive material and underlying portions of the seed layer form theUBMs 144. The photoresist and portions of the seed layer on which theconductive material is not formed are removed. The photoresist may beremoved by an acceptable ashing or stripping process, such as using anoxygen plasma or the like. Once the photoresist is removed, exposedportions of the seed layer are removed using an acceptable etchingprocess, such as wet or dry etching.

In FIG. 11 , conductive connectors 146 are formed on the UBMs 144. Theconductive connectors 146 may be ball grid array (BGA) connectors,solder balls, metal pillars, controlled collapse chip connection (C4)bumps, micro bumps, electroless nickel-electroless palladium-immersiongold technique (ENEPIG) formed bumps, or the like. The conductiveconnectors 146 may include a conductive material such as solder, copper,aluminum, gold, nickel, silver, palladium, tin, the like, or acombination thereof. In some embodiments, the conductive connectors 146are formed by initially forming a layer of solder through evaporation,electroplating, printing, solder transfer, ball placement, or the like.Once a layer of solder has been formed on the structure, a reflow may beperformed in order to shape the material into the desired bump shapes.In another embodiment, the conductive connectors 146 comprise metalpillars (such as a copper pillar) formed by sputtering, printing,electro plating, electroless plating, CVD, or the like. The metalpillars may be solder free and have substantially vertical sidewalls. Insome embodiments, a metal cap layer is formed on the top of the metalpillars. The metal cap layer may include nickel, tin, tin-lead, gold,silver, palladium, indium, nickel-palladium-gold, nickel-gold, the like,or a combination thereof and may be formed by a plating process.

In FIG. 12 , integrated circuit dies 50 (e.g., first integrated circuitdies 50A and second integrated circuit dies 50B) are attached to thestructure of FIG. 11 . A desired type and quantity of integrated circuitdies 50 are adhered in each of the package regions 100A and 100B. Theintegrated circuit dies 50 may be referred to as package modules 50. Inthe embodiment shown, multiple integrated circuit dies 50 are adheredadjacent one another, including the first integrated circuit die 50A andthe second integrated circuit die 50B in each of the first packageregion 100A and the second package region 100B. The first integratedcircuit die 50A may be a logic device, such as a central processing unit(CPU), a graphics processing unit (GPU), a system-on-a-chip (SoC), amicrocontroller, or the like. The second integrated circuit die 50B maybe a memory device, such as a dynamic random access memory (DRAM) die, astatic random access memory (SRAM) die, a hybrid memory cube (HMC)module, a high bandwidth memory (HBM) module, or the like. In someembodiments, the integrated circuit dies 50A and 50B may be the sametype of dies, such as SoC dies. The first integrated circuit die 50A andsecond integrated circuit die 50B may be formed in processes of a sametechnology node, or may be formed in processes of different technologynodes. For example, the first integrated circuit die 50A may be of amore advanced process node than the second integrated circuit die 50B.The integrated circuit dies 50A and 50B may have different sizes (e.g.,different heights and/or surface areas), or may have the same size(e.g., same heights and/or surface areas).

The integrated circuit dies 50 are attached to the conductive connectors146. That is, the die connectors 66 of the integrated circuit dies 50Aand 50B are connected to the conductive connectors 146 opposite the UBMs144.

In some embodiments, the conductive connectors 146 are reflowed toattach the integrated circuit dies 50 to the UBMs 144. The conductiveconnectors 146 electrically and/or physically couple the redistributionstructure 120, including metallization patterns in the redistributionstructure 120, to the integrated circuit dies 50. In some embodiments, asolder resist (not shown) is formed on the redistribution structure 120.The conductive connectors 146 may be disposed in openings in the solderresist to be electrically and mechanically coupled to the UBMs 144. Thesolder resist may be used to protect areas of the redistributionstructure 120 from external damage.

The conductive connectors 146 may have an epoxy flux (not shown) formedthereon before they are reflowed with at least some of the epoxy portionof the epoxy flux remaining after the integrated circuit dies 50 areattached to the redistribution structure 120. This remaining epoxyportion may act as an underfill to reduce stress and protect the jointsresulting from reflowing the conductive connectors 146.

In FIG. 13 , an underfill 150 is formed between the integrated circuitdies 50A and 50B in each of the regions 100A and 100B and the dielectriclayer 140, including between and around the UBMs 144, the conductiveconnectors 146, and the die connectors 66. The underfill 150 may beformed by a capillary flow process after the integrated circuit dies 50are attached or may be formed by a suitable deposition method before theintegrated circuit dies 50 are attached. Although not shown in FIG. 13and subsequent figures, in some embodiments, the underfill 150 is alsobetween the integrated circuit dies 50 in adjacent regions 100A and100B.

In FIG. 14 , an encapsulant 152 is formed around the integrated circuitdies 50, the conductive connectors 146, and the underfill 150. Afterformation, the encapsulant 152 encapsulates the conductive connectors146 and the integrated circuit dies 50. The encapsulant 152 may be amolding compound, epoxy, or the like. The encapsulant 152 may be appliedby compression molding, transfer molding, or the like. The encapsulant152 may be applied in liquid or semi-liquid form and then subsequentlycured. In some embodiments, a planarization step may be performed toremove and planarize an upper surface of the encapsulant 152. In someembodiments, surfaces of the underfill 150, the encapsulant 152, and theintegrated circuits dies 50 are coplanar (within process variation).

In FIG. 15 , a carrier substrate de-bonding is performed to detach (or“de-bond”) the carrier substrate 102 from the redistribution structure120, e.g., the dielectric layer 124. In accordance with someembodiments, the de-bonding includes projecting a light such as a laserlight or an UV light on the release layer 104 so that the release layer104 decomposes under the heat of the light and the carrier substrate 102can be removed. The structure is then flipped over and placed on a tape(not shown).

In FIG. 16 , UBMs 160 are formed for external connection to theredistribution structure 120, e.g., the metallization pattern 126. TheUBMs 160 have bump portions on and extending along the major surface ofthe dielectric layer 124. The UBMs 160 may be formed of the samematerial as the metallization pattern 126.

In FIG. 17 , conductive connectors 162 are formed on the UBMs 160. Theconductive connectors 162 may be ball grid array (BGA) connectors,solder balls, metal pillars, controlled collapse chip connection (C4)bumps, micro bumps, electroless nickel-electroless palladium-immersiongold technique (ENEPIG) formed bumps, or the like. The conductiveconnectors 162 may include a conductive material such as solder, copper,aluminum, gold, nickel, silver, palladium, tin, the like, or acombination thereof. In some embodiments, the conductive connectors 162are formed by initially forming a layer of solder through evaporation,electroplating, printing, solder transfer, ball placement, or the like.Once a layer of solder has been formed on the structure, a reflow may beperformed in order to shape the material into the desired bump shapes.In another embodiment, the conductive connectors 162 comprise metalpillars (such as a copper pillar) formed by sputtering, printing,electro plating, electroless plating, CVD, or the like. The metalpillars may be solder free and have substantially vertical sidewalls. Insome embodiments, a metal cap layer is formed on the top of the metalpillars. The metal cap layer may include nickel, tin, tin-lead, gold,silver, palladium, indium, nickel-palladium-gold, nickel-gold, the like,or a combination thereof and may be formed by a plating process.

As illustrated in FIG. 18 , a singulation process is performed by sawingalong scribe line regions, e.g., between the first package region 100Aand the second package region 100B. The sawing singulates the firstpackage region 100A from the second package region 100B. The resulting,singulated device stack is from one of the first package region 100A orthe second package region 100B. The singulated structures are then eachflipped over and mounted on a package substrate 200 (see FIG. 19 ).

In FIG. 19 , the first package component 100 may be mounted to thepackage substrate 200 using the conductive connectors 162. The packagesubstrate 200 includes a substrate core 202 and bond pads 204 over thesubstrate core 202. The substrate core 202 may be made of asemiconductor material such as silicon, germanium, diamond, or the like.Alternatively, compound materials such as silicon germanium, siliconcarbide, gallium arsenic, indium arsenide, indium phosphide, silicongermanium carbide, gallium arsenic phosphide, gallium indium phosphide,combinations of these, and the like, may also be used. Additionally, thesubstrate core 202 may be a semiconductor-on-insulator (SOI) substrate.Generally, an SOI substrate includes a layer of a semiconductor materialsuch as epitaxial silicon, germanium, silicon germanium, SOI, SGOI, orcombinations thereof. The substrate core 202 is, in one alternativeembodiment, based on an insulating core such as a fiberglass reinforcedresin core. One example core material is fiberglass resin such as FR4.Alternatives for the core material include bismaleimide-triazine (BT)resin, or alternatively, other PCB materials or films. Build up filmssuch as ABF or other laminates may be used for substrate core 202.

The substrate core 202 may include active and passive devices (notshown). A wide variety of devices such as transistors, capacitors,resistors, combinations of these, and the like may be used to generatethe structural and functional requirements of the design for the devicestack. The devices may be formed using any suitable methods.

The substrate core 202 may also include metallization layers and vias(not shown), with the bond pads 204 being physically and/or electricallycoupled to the metallization layers and vias. The metallization layersmay be formed over the active and passive devices and are designed toconnect the various devices to form functional circuitry. Themetallization layers may be formed of alternating layers of dielectricmaterial (e.g., low-k dielectric material) and conductive material(e.g., copper) with vias interconnecting the layers of conductivematerial and may be formed through any suitable process (such asdeposition, damascene, dual damascene, or the like). In someembodiments, the substrate core 202 is substantially free of active andpassive devices.

In some embodiments, the conductive connectors 162 are reflowed toattach the first package component 100 to the bond pads 204. Theconductive connectors 162 electrically and/or physically couple thepackage substrate 200, including metallization layers in the substratecore 202, to the first package component 100. In some embodiments, asolder resist 206 is formed on the substrate core 202. The conductiveconnectors 162 may be disposed in openings in the solder resist 206 tobe electrically and mechanically coupled to the bond pads 204. Thesolder resist 206 may be used to protect areas of the substrate 202 fromexternal damage.

The conductive connectors 162 may have an epoxy flux (not shown) formedthereon before they are reflowed with at least some of the epoxy portionof the epoxy flux remaining after the first package component 100 isattached to the package substrate 200. This remaining epoxy portion mayact as an underfill to reduce stress and protect the joints resultingfrom reflowing the conductive connectors 162. In some embodiments, anunderfill 208 may be formed between the first package component 100 andthe package substrate 200 and surrounding the conductive connectors 162.The underfill 208 may be formed by a capillary flow process after thesecond package component 200 is attached or may be formed by a suitabledeposition method before the second package component 200 is attached.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or the 3DIC, the use ofprobes and/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

Embodiments may achieve advantages. Redistribution structures includingmetallization patterns, and methods of forming the same are provided,according to some embodiments. In particular, the redistributionstructures include the metallization patterns with shapes that providemore flexibility for the metallization pattern to deal with bending andother deformations without breaking. For example, the metallizationpatterns can have a curved, “C”-like or “U”-like shape. Metallizationpatterns in redistribution structures may bend or deform due tocoefficient of thermal expansion (CTE) mismatch of materials in asemiconductor package. This CTE mismatch can cause the metallizationpatterns to endure high stress due to the bending and deformation.However, the disclosed shapes of the metallization patterns with theincreased flexibility increase the reliability of the redistributionstructure. These flexibly-shaped metallization patterns are surroundedby conforming dielectric layers, such as polymer layers. The combinationof the flexibly-shaped metallization patterns and the surroundingconforming dielectric layers provide a buffer to release the stress inthe redistribution structure and the package structure.

One embodiment includes a first integrated circuit die. The packagestructure also includes a redistribution structure bonded to the firstintegrated circuit die, the redistribution structure including a firstdielectric layer. The structure also includes a first metallizationpattern in the first dielectric layer, the first metallization patternincluding a plurality of first conductive features, each of the firstconductive features including a first conductive via and a firstconductive line, the first conductive via being in the first dielectriclayer, the first conductive line being over the first dielectric layerand electrically coupled to the respective first conductive via, each ofthe first conductive lines including a curve in a plan view. Thestructure also includes a second dielectric layer over the firstdielectric layer and the first metallization pattern. The structure alsoincludes a second metallization pattern in the second dielectric layer,the second metallization pattern including a plurality of secondconductive features, each of the second conductive features including asecond conductive via in the second dielectric layer, each of the secondconductive vias being over and electrically coupled to a respectivefirst conductive line.

Embodiments may include one or more of the following features. Thepackage structure where the second metallization pattern is closer tothe first integrated circuit die than the first metallization pattern.The package structure further including a package substrate bonded to afirst side of the redistribution structure, the first integrated circuitdie being bonded to a second side of the redistribution structure, thefirst metallization pattern being closer to the first side of theredistribution structure than the second metallization pattern. Thepackage substrate is bonded to the first side of the redistributionstructure with a first set of conductive connectors, and where the firstintegrated circuit die being is bonded to the second side of theredistribution structure with a second set of conductive connectors. Thepackage structure further including an underfill between the firstintegrated circuit die and the second side of the redistributionstructure, the underfill surrounding the second set of conductiveconnectors an encapsulant on the second side of the redistributionstructure and sidewalls of the first integrated circuit die and theunderfill. A first angle is between a first plane and a second plane,the first plane and the second plane intersecting a first one of theplurality of first conductive features, the first plane and second planebeing perpendicular to a major surface of the second dielectric layer,the first plane extending from a center of a first conductive vias ofthe first one of the plurality of first conductive features to a centerof the second conductive via over and coupled to the first one of theplurality of first conductive features, the second plane extending fromthe center of the second conductive via over and coupled to the firstone of the plurality of first conductive features along a first portionof the first conductive line of the first one of the plurality of firstconductive features, the first angle being in a range from 30° to 150°.Each of the first conductive lines of the plurality of first conductivefeatures is free from corners in the plan view. Each of the firstconductive lines includes copper and where the second dielectric layerincludes a polymer. The second dielectric layer includes polybenzoxazole(PBO), polyimide, or benzocyclobutene (BCB).

One embodiment includes a first package component including a firstmodule and a second module, the first module including a logic chip, thesecond module including a memory chip. The package structure alsoincludes a first redistribution structure including metallizationpatterns in dielectric layers, a first side of the first redistributionstructure being physically and electrically coupled to the first andsecond modules, a first metallization pattern of the metallizationpatterns being in a first dielectric layer of the dielectric layers, thefirst metallization pattern including first conductive features, each ofthe first conductive features including a first conductive via and afirst conductive line, the first conductive via being in the firstdielectric layer, the first conductive line being over the firstdielectric layer and electrically coupled to the respective firstconductive via, each of the first conductive lines being curved and freeof corners in a plan view. The structure also includes a second packagecomponent including a package substrate bonded to a second side of thefirst redistribution structure, the second side being opposite the firstside.

Embodiments may include one or more of the following features. Thepackage structure where the first redistribution structure furtherincludes a second dielectric layer over the first dielectric layer andthe first metallization pattern a second metallization pattern in thesecond dielectric layer, the second metallization pattern includingsecond conductive features, each of the second conductive featuresincluding a second conductive via in the second dielectric layer, eachof the second conductive vias being over and electrically coupled to arespective first conductive line. The first conductive line directlyconnects the first conductive via to the second conductive via. Thesecond metallization pattern is closer to the first and second modulesthan the first metallization pattern. Each of the first conductive linesincludes copper and where the second dielectric layer includes apolymer. The first package component further includes an underfillbetween the first module, the second module, and the first side of thefirst redistribution structure, the underfill extending along firstsidewalls of the first and second modules, the first sidewalls of thefirst and second module facing each other an encapsulant on the firstside of the first redistribution structure and on second sidewalls ofthe first and second modules, the second sidewalls of the first andsecond modules facing away from each other. Top surfaces of the firstmodule, the second module, the underfill, and the encapsulant arecoplanar.

One embodiment includes forming a first dielectric layer over asubstrate. The method also includes patterning the first dielectriclayer. The method also includes forming a first metallization pattern inand along an upper surface of the patterned first dielectric layer, thefirst metallization pattern including first conductive features, each ofthe first conductive features including a first conductive via and afirst conductive line, the first conductive via being in the firstdielectric layer, the first conductive line being along the uppersurface of the first dielectric layer and electrically coupled to therespective first conductive via, each of the first conductive linesbeing curved and free of corners in a plan view. The method alsoincludes forming a second dielectric layer over the patterned firstdielectric layer and the first metallization pattern. The method alsoincludes patterning the second dielectric layer. The method alsoincludes forming a second metallization pattern in the patterned seconddielectric layer, the second metallization pattern including secondconductive vias in the second dielectric layer, each of the secondconductive vias being electrically coupled to a respective firstconductive line of the first conductive features.

Embodiments may include one or more of the following features. Themethod further including forming bond pads over the second dielectriclayer and the second metallization pattern, the bond pads being coupledto the second conductive vias bonding a first module and a second moduleto the bond pads, the first module including a logic chip, the secondmodule including a memory chip encapsulating the first and secondmodules in an encapsulant removing the substrate and singulating theencapsulant, the first and second metallization patterns, and the firstand second dielectric layers. The method further including aftersingulating, bonding the singulated structure to a package substrate,the package substrate being on an opposite side of the first and secondmetallization patterns and the first and second dielectric layers as thefirst and second modules. Each of the first conductive lines includescopper and where the second dielectric layer includes a polymer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming a first dielectriclayer over a substrate; patterning the first dielectric layer; forming afirst metallization pattern in and along an upper surface of thepatterned first dielectric layer, the first metallization patterncomprising first conductive features, each of the first conductivefeatures comprising a first conductive via and a first conductive line,the first conductive via being in the first dielectric layer, the firstconductive line being over the first dielectric layer and electricallycoupled to the respective first conductive via, each of the firstconductive lines comprising a curve in a plan view; forming a seconddielectric layer over the patterned first dielectric layer and the firstmetallization pattern; patterning the second dielectric layer; forming asecond metallization pattern in the patterned second dielectric layer,the second metallization pattern being electrically coupled to the firstmetallization pattern; removing the substrate; and singulating the firstand second metallization patterns and the first and second dielectriclayers.
 2. The method of claim 1, wherein each of the first conductivelines comprise copper and wherein the second dielectric layer comprisesa polymer.
 3. The method of claim 1 further comprising: forming bondpads over the second dielectric layer and the second metallizationpattern, the bond pads being coupled to the second metallizationpattern; and bonding a logic chip and a memory chip to the bond padswith conductive connectors.
 4. The method of claim 3 further comprising:encapsulating the logic chip and the memory chip in an encapsulant; andsingulating the encapsulant.
 5. The method of claim 4 furthercomprising: forming an underfill between the logic chip and the memorychip and the second dielectric layer, the underfill surrounding theconductive connectors, the encapsulant being on sidewalls of the logicchip, the memory chip, and the underfill.
 6. The method of claim 4further comprising: after singulating, bonding the singulated structureto a package substrate, the package substrate being on an opposite sideof the first and second metallization patterns and the first and seconddielectric layers as the logic chip and the memory chip.
 7. The methodof claim 1, wherein the second metallization pattern comprising secondconductive vias in the second dielectric layer, each of the secondconductive vias being electrically coupled to a respective firstconductive line of the first conductive features.
 8. The method of claim7, wherein the first conductive line directly connects the firstconductive via to the second conductive via.
 9. The method of claim 1,wherein the second dielectric layer comprises polybenzoxazole (PBO),polyimide, or benzocyclobutene (BCB).
 10. The method of claim 1, whereina first angle is between a first plane and a second plane, the firstplane and the second plane intersecting a first one of the firstconductive features, the first plane and second plane beingperpendicular to a major surface of the first dielectric layer, thefirst plane extending from a center of a first conductive vias of thefirst one of the first conductive features to a center of a secondconductive via over and coupled to the first one of first conductivefeatures, the second plane extending from the center of the secondconductive via over and coupled to the first one of first conductivefeatures along a first portion of the first conductive line of the firstone of first conductive features, the first angle being in a range from30° to 150°.
 11. A method comprising: forming a redistribution structureover a substrate, wherein forming redistribution structure comprises:depositing a first dielectric layer; forming a first metallizationpattern in the first dielectric layer, the first metallization patterncomprising a plurality of first conductive features, each of the firstconductive features comprising a first conductive via and a firstconductive line, the first conductive via being in the first dielectriclayer, the first conductive line being over the first dielectric layerand electrically coupled to the respective first conductive via, each ofthe first conductive lines comprising C-shape in a plan view; depositinga second dielectric layer over the first dielectric layer and the firstmetallization pattern; forming a second metallization pattern in thesecond dielectric layer, the second metallization pattern beingelectrically coupled to the first metallization pattern; forming bondpads over the second dielectric layer and the second metallizationpattern, the bond pads being coupled to the second metallizationpattern; bonding a first module and a second module to the bond pads,the first module comprising a logic chip, the second module comprising amemory chip; encapsulating the first and second modules in anencapsulant; removing the substrate; and singulating the encapsulant,the first and second metallization patterns, and the first and seconddielectric layers.
 12. The method of claim 11 further comprising:bonding the singulated structure to a package substrate, the packagesubstrate being on an opposite side of the first and secondmetallization patterns and the first and second dielectric layers as thelogic chip and the memory chip.
 13. The method of claim 11, wherein thesecond metallization pattern comprising second conductive vias in thesecond dielectric layer, each of the second conductive vias beingelectrically coupled to a respective first conductive line of the firstconductive features, at least one first conductive line directlyconnecting a first conductive via to a second conductive via.
 14. Themethod of claim 11, wherein each of the first conductive lines comprisecopper and wherein the second dielectric layer comprises a polymer. 15.A package structure comprising: a first package component comprising: afirst module and a second module, the first module comprising a logicchip, the second module comprising a memory chip; and a firstredistribution structure comprising metallization patterns in dielectriclayers, a first side of the first redistribution structure beingphysically and electrically coupled to the first and second modules, afirst metallization pattern of the metallization patterns being in afirst dielectric layer of the dielectric layers, the first metallizationpattern comprising first conductive features, each of the firstconductive features comprising a first conductive via and a firstconductive line, the first conductive line being over the firstdielectric layer and electrically coupled to the respective firstconductive via, each of the first conductive lines having a first shape,the first shape being configured to deform without breaking; and asecond package component comprising: a package substrate bonded to asecond side of the first redistribution structure, the second side beingopposite the first side, wherein a first angle is between a first planeand a second plane, the first plane and the second plane intersecting afirst one of the first conductive features, the first plane and secondplane being perpendicular to a major surface of the first dielectriclayer, the first plane extending from a center of a first conductivevias of the first one of the first conductive features to a center of asecond conductive via over and coupled to the first one of firstconductive features, the second plane extending from the center of thesecond conductive via over and coupled to the first one of firstconductive features along a first portion of the first conductive lineof the first one of first conductive features, the first angle being ina range from 30° to 150°.
 16. The package structure of claim 15, whereinthe first redistribution structure comprising: a second metallizationpattern of the metallization patterns in a second dielectric layer ofthe dielectric layers, the second dielectric layer being over the firstdielectric layer and the first metallization pattern, the secondmetallization pattern comprising a plurality of second conductivefeatures, each of the second conductive features comprising a secondconductive via in the second dielectric layer, each of the secondconductive vias being over and electrically coupled to a respectivefirst conductive line.
 17. The package structure of claim 16, whereineach of the first conductive lines comprise copper and wherein thesecond dielectric layer comprises a polymer.
 18. The package structureof claim 15 further comprising: an underfill between the first andsecond modules and the first redistribution structure; and anencapsulant on the first redistribution structure and sidewalls of thefirst and second modules and the underfill.
 19. The package structure ofclaim 18, wherein top surfaces of the first module, the second module,the underfill, and the encapsulant are coplanar.
 20. The method of claim11 further comprising: forming an underfill between the first module,the second module, and the second dielectric layer, the encapsulantbeing on sidewalls of the first module, the second module, and theunderfill.